The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high power and high frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices. The key advantages of SiC-based technology include reduced switching losses, higher power density, better heat dissipation and increased bandwidth capability. At the system level, this results in highly compact solutions with vastly improved energy efficiency at reduced cost. The rapidly growing list of current and projected commercial applications utilizing SiC technologies include switching power supplies, inverters for green (solar and windmill) energy generation, industrial motor drives, HEV and EV vehicles, smart grid power switching and wireless communication base stations.
|Physical Vapor Transport
||Hexagonal, Single Crystal
||Up to 150mm, 200mm under development
||350µm (n-type, 3" SI), 500µm (SI)
||Prime, Development, Mechanical
||370 (W/mK) at Room Temperature
|Thermal Expansion Coefficient
|Specific Heat (25⁰C)
||0.71 (J g-1 K-1)
|Additional Key Properties of II-VI Advanced Materials SiC Substrates (typical values*)
||> 1∙1011 Ohm-cm
||< 20 arc-sec
||< 25 arc-sec
|| < 5 Å
||< 5 Å
||< 1∙104 cm-2
||< 0.1 cm-2
||< 0.1 cm-2
* Typical Production Values - Contact Us for Standard Specifications or Custom Requests
** Measured by White Light Interferometry (250µm x 350µm)
Quoted upon request. Contact Us for details.
Contact Us to discuss your custom specification requirements.